Stock: 4
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 4 | ₹ 135.10 | ₹ 540.40 |
| 1 | ₹ 146.85 | ₹ 146.85 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 100 V | |
| Continuous Drain Current at 25C | 1.1A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 1.2Ohm @ 660mA, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 8.7 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 200 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2W (Ta), 3.1W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | SOT-223 | |
| Component Housing Style | TO-261-4, TO-261AA |
Description
Supports a continuous drain current (Id) of 1.1A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 8.7 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 8.7 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 200 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 200 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Enclosure type SOT-223 ensuring device integrity. Highest power dissipation 2W (Ta), 3.1W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 8.7 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.2Ohm @ 660mA, 10V for MOSFET criteria. Manufacturer package type SOT-223 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
