IRFPS43N50K

IRFPS43N50K

Data Sheet

Attribute
Description
Manufacturer Part Number
IRFPS43N50K
Manufacturer
Description
MOSFET N-CH 500V 47A SUPER247
Note : GST will not be applied to orders shipping outside of India

Stock:
100

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
71 ₹ 1,203.95 ₹ 85,480.45
17 ₹ 1,272.74 ₹ 21,636.58
1 ₹ 1,547.93 ₹ 1,547.93

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 500 V
Continuous Drain Current at 25C 47A (Tc)
Gate Drive Voltage Range 10V
Max On-State Resistance 90mOhm @ 28A, 10V
Max Threshold Gate Voltage 5V @ 250µA
Max Gate Charge at Vgs 350 nC @ 10 V
Maximum Gate Voltage ±30V
Max Input Cap at Vds 8310 pF @ 25 V
Transistor Special Function -
Max Heat Dissipation 540W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Vendor Package Type SUPER-247™ (TO-274AA)
Component Housing Style TO-274AA

Description

Supports a continuous drain current (Id) of 47A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 350 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 350 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 8310 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 8310 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-274AA providing mechanical and thermal shielding. Enclosure type SUPER-247™ (TO-274AA) ensuring device integrity. Highest power dissipation 540W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 350 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 90mOhm @ 28A, 10V for MOSFET criteria. Manufacturer package type SUPER-247™ (TO-274AA) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.

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