Stock: 3000
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 39.25 | ₹ 1,17,750.00 |
| 300 | ₹ 38.00 | ₹ 11,400.00 |
| 1500 | ₹ 36.76 | ₹ 55,140.00 |
| 3000 | ₹ 36.13 | ₹ 1,08,390.00 |
| 9375 | ₹ 35.51 | ₹ 3,32,906.25 |
Stock: 1050
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1050 | ₹ 54.77 | ₹ 57,508.50 |
| 300 | ₹ 59.34 | ₹ 17,802.00 |
Stock: 50
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 19 | ₹ 65.09 | ₹ 1,236.71 |
| 5 | ₹ 100.13 | ₹ 500.65 |
Stock: 40
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 18 | ₹ 66.75 | ₹ 1,201.50 |
| 4 | ₹ 106.80 | ₹ 427.20 |
| 1 | ₹ 133.50 | ₹ 133.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 100 V | |
| Continuous Drain Current at 25C | 7.7A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 270mOhm @ 4.6A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 16 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 360 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2.5W (Ta), 42W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | DPAK | |
| Component Housing Style | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 7.7A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 16 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 16 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 360 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 360 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type DPAK ensuring device integrity. Highest power dissipation 2.5W (Ta), 42W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 16 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 270mOhm @ 4.6A, 10V for MOSFET criteria. Manufacturer package type DPAK for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
