Stock: 1383
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 977 | ₹ 32.63 | ₹ 31,879.51 |
| 412 | ₹ 35.14 | ₹ 14,477.68 |
| 191 | ₹ 40.16 | ₹ 7,670.56 |
| 56 | ₹ 47.05 | ₹ 2,634.80 |
| 16 | ₹ 81.57 | ₹ 1,305.12 |
| 4 | ₹ 125.49 | ₹ 501.96 |
Stock: 1106
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 888 | ₹ 70.27 | ₹ 62,399.76 |
| 178 | ₹ 80.31 | ₹ 14,295.18 |
| 1 | ₹ 200.78 | ₹ 200.78 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 400 V | |
| Continuous Drain Current at 25C | 1.8A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 7Ohm @ 1.1A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 13 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 270 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 50W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-251AA | |
| Component Housing Style | TO-251-3 Short Leads, IPAK, TO-251AA |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 1.8A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 400 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 13 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 13 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 270 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 270 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-251-3 Short Leads, IPAK, TO-251AA providing mechanical and thermal shielding. Enclosure type TO-251AA ensuring device integrity. Highest power dissipation 50W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 13 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 7Ohm @ 1.1A, 10V for MOSFET criteria. Manufacturer package type TO-251AA for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
