SI1302DL-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI1302DL-T1-GE3
Manufacturer
Description
MOSFET N-CH D-S 30V SC-70-3
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 600mA (Ta) | |
| Max On-State Resistance | 480 mOhm @ 600mA, 10V | |
| Max Threshold Gate Voltage | 3V @ 250µA | |
| Gate Charge at Vgs | 1.4nC @ 10V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 280mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 600mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 1.4nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 280mW for device protection. Peak Rds(on) at Id 1.4nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 480 mOhm @ 600mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.
