SI1441EDH-T1-GE3

SI1441EDH-T1-GE3
Attribute
Description
Manufacturer Part Number
SI1441EDH-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 4A SOT-363
Note : GST will not be applied to orders shipping outside of India

Stock:
3000

Distributor: 113

Lead Time: Not specified

Quantity Unit Price Ext. Price
3000 ₹ 17.19 ₹ 51,570.00
6000 ₹ 17.07 ₹ 1,02,420.00
9000 ₹ 16.95 ₹ 1,52,550.00
12000 ₹ 16.82 ₹ 2,01,840.00
15000 ₹ 16.57 ₹ 2,48,550.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 4A (Tc)
Gate Drive Voltage Range 1.8V, 4.5V
Max On-State Resistance 41mOhm @ 5A, 4.5V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 33 nC @ 8 V
Maximum Gate Voltage ±10V
Max Input Cap at Vds -
Transistor Special Function -
Max Heat Dissipation 2.8W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SC-70-6
Component Housing Style 6-TSSOP, SC-88, SOT-363

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 4A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 1.8V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 33 nC @ 8 V gate charge at Vgs for enhanced switching efficiency. Upholds 33 nC @ 8 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 6-TSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Enclosure type SC-70-6 ensuring device integrity. Highest power dissipation 2.8W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 33 nC @ 8 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 41mOhm @ 5A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type SC-70-6 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±10V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.

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