SI3421DV-T1-GE3

SI3421DV-T1-GE3
Attribute
Description
Manufacturer Part Number
SI3421DV-T1-GE3
Manufacturer
Description
MOSFET P-CH 30V 8A 6TSOP
Note : GST will not be applied to orders shipping outside of India

Stock:
138000

Distributor: 157

Lead Time: Not specified

Quantity Unit Price Ext. Price
138000 ₹ 14.93 ₹ 20,60,340.00
3000 ₹ 16.17 ₹ 48,510.00

Stock:
36

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
23 ₹ 24.30 ₹ 558.90
6 ₹ 40.50 ₹ 243.00
1 ₹ 80.99 ₹ 80.99

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Field Effect Transistor Type P-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 30 V
Continuous Drain Current at 25C 8A (Tc)
Gate Drive Voltage Range 4.5V, 10V
Max On-State Resistance 19.2mOhm @ 7A, 10V
Max Threshold Gate Voltage 3V @ 250µA
Max Gate Charge at Vgs 69 nC @ 10 V
Maximum Gate Voltage ±20V
Max Input Cap at Vds 2580 pF @ 15 V
Transistor Special Function -
Max Heat Dissipation 2W (Ta), 4.2W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type 6-TSOP
Component Housing Style SOT-23-6 Thin, TSOT-23-6

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 8A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 69 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 69 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2580 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 2580 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case SOT-23-6 Thin, TSOT-23-6 providing mechanical and thermal shielding. Enclosure type 6-TSOP ensuring device integrity. Highest power dissipation 2W (Ta), 4.2W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 69 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 19.2mOhm @ 7A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 6-TSOP for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.

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