SI3493BDV-T1-GE3
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 8A (Tc) | |
| Max On-State Resistance | 27.5 mOhm @ 7A, 4.5V | |
| Max Threshold Gate Voltage | 900mV @ 250µA | |
| Gate Charge at Vgs | 43.5nC @ 5V | |
| Input Cap at Vds | 1805pF @ 10V | |
| Maximum Power Handling | 2.97W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSOP (0.065", 1.65mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 8A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 43.5nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1805pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-TSOP (0.065", 1.65mm Width) providing mechanical and thermal shielding. Peak power 2.97W for device protection. Peak Rds(on) at Id 43.5nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 27.5 mOhm @ 7A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 900mV @ 250µA for MOSFET threshold level.
