Stock: 20
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 16 | ₹ 64.08 | ₹ 1,025.28 |
| 5 | ₹ 89.00 | ₹ 445.00 |
| 1 | ₹ 106.80 | ₹ 106.80 |
Stock: 99
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 39 | ₹ 100.13 | ₹ 3,905.07 |
| 13 | ₹ 120.15 | ₹ 1,561.95 |
| 3 | ₹ 160.20 | ₹ 480.60 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 30 V | |
| Continuous Drain Current at 25C | 29A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 5mOhm @ 15A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | 195 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 6000 pF @ 15 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 3.5W (Ta), 7.8W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-SOIC | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 29A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 195 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 195 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 6000 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 6000 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Highest power dissipation 3.5W (Ta), 7.8W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 195 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5mOhm @ 15A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 8-SOIC for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
