Stock: 35000
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 35000 | ₹ 44.50 | ₹ 15,57,500.00 |
| 2500 | ₹ 48.21 | ₹ 1,20,525.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 150 V | |
| Continuous Drain Current at 25C | 3.5A (Ta) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 50mOhm @ 5A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA (Min) | |
| Max Gate Charge at Vgs | 36 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 1.56W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-SOIC | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 3.5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 150 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 36 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 36 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Highest power dissipation 1.56W (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 36 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 50mOhm @ 5A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 8-SOIC for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 250µA (Min) for MOSFET threshold level.
