Attribute
Description
Manufacturer Part Number
SI8413DB-T1-E1
Manufacturer
Description
MOSFET P-CH 20V 4.8A 2X2 4-MFP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 4.8A (Ta) | |
| Max On-State Resistance | 48 mOhm @ 1A, 4.5V | |
| Max Threshold Gate Voltage | 1.4V @ 250µA | |
| Gate Charge at Vgs | 21nC @ 4.5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 1.47W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 4-XFBGA, CSPBGA |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 4.8A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 21nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case 4-XFBGA, CSPBGA providing mechanical and thermal shielding. Peak power 1.47W for device protection. Peak Rds(on) at Id 21nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 48 mOhm @ 1A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.4V @ 250µA for MOSFET threshold level.
