Stock: 3000
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 17.19 | ₹ 51,570.00 |
| 9000 | ₹ 16.95 | ₹ 1,52,550.00 |
| 12000 | ₹ 16.82 | ₹ 2,01,840.00 |
| 30000 | ₹ 16.57 | ₹ 4,97,100.00 |
| 45000 | ₹ 16.32 | ₹ 7,34,400.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 20 V | |
| Continuous Drain Current at 25C | 2.1A (Ta) | |
| Gate Drive Voltage Range | 1.5V, 4.5V | |
| Max On-State Resistance | 72mOhm @ 1A, 4.5V | |
| Max Threshold Gate Voltage | 900mV @ 250µA | |
| Max Gate Charge at Vgs | 8 nC @ 8 V | |
| Maximum Gate Voltage | ±8V | |
| Max Input Cap at Vds | 245 pF @ 10 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 500mW (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 4-Microfoot | |
| Component Housing Style | 4-XFBGA |
Description
Supports a continuous drain current (Id) of 2.1A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 1.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 8 nC @ 8 V gate charge at Vgs for enhanced switching efficiency. Upholds 8 nC @ 8 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 245 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 245 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 4-XFBGA providing mechanical and thermal shielding. Enclosure type 4-Microfoot ensuring device integrity. Highest power dissipation 500mW (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 8 nC @ 8 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 72mOhm @ 1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 4-Microfoot for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 900mV @ 250µA for MOSFET threshold level.
