Attribute
Description
Manufacturer Part Number
SIB404DK-T1-GE3
Manufacturer
Description
MOSFET N-CH 12V 8.9A SC-75-6L
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 12V | |
| Continuous Drain Current at 25C | 8.9A (Ta) | |
| Max On-State Resistance | - | |
| Max Threshold Gate Voltage | 700mV @ 250µA | |
| Gate Charge at Vgs | 15nC @ 4.5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 2.5W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | PowerPAK® SC-75-6L |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 8.9A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 12V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 15nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case PowerPAK® SC-75-6L providing mechanical and thermal shielding. Peak power 2.5W for device protection. Peak Rds(on) at Id 15nC @ 4.5V for MOSFET efficiency. Peak Vgs(th) at Id 700mV @ 250µA for MOSFET threshold level.
