SIRA02DP-T1-GE3

SIRA02DP-T1-GE3
Attribute
Description
Manufacturer Part Number
SIRA02DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 50A PPAK SO-8
Note : GST will not be applied to orders shipping outside of India

Stock:
6258

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
6000 ₹ 63.54 ₹ 3,81,240.00
3000 ₹ 64.47 ₹ 1,93,410.00
1000 ₹ 77.77 ₹ 77,770.00
500 ₹ 78.61 ₹ 39,305.00
100 ₹ 83.51 ₹ 8,351.00
10 ₹ 97.30 ₹ 973.00
1 ₹ 120.40 ₹ 120.40

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 30 V
Continuous Drain Current at 25C 50A (Tc)
Gate Drive Voltage Range 4.5V, 10V
Max On-State Resistance 2mOhm @ 15A, 10V
Max Threshold Gate Voltage 2.2V @ 250µA
Max Gate Charge at Vgs 117 nC @ 10 V
Maximum Gate Voltage +20V, -16V
Max Input Cap at Vds 6150 pF @ 15 V
Transistor Special Function -
Max Heat Dissipation 5W (Ta), 71.4W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type PowerPAK® SO-8
Component Housing Style PowerPAK® SO-8

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 50A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 117 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 117 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 6150 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 6150 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case PowerPAK® SO-8 providing mechanical and thermal shielding. Enclosure type PowerPAK® SO-8 ensuring device integrity. Highest power dissipation 5W (Ta), 71.4W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 117 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2mOhm @ 15A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type PowerPAK® SO-8 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs +20V, -16V for MOSFET parameters. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.

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