Stock: 52
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 4 | ₹ 386.26 | ₹ 1,545.04 |
| 25 | ₹ 377.54 | ₹ 9,438.50 |
| 50 | ₹ 304.02 | ₹ 15,201.00 |
| 150 | ₹ 300.29 | ₹ 45,043.50 |
| 250 | ₹ 297.79 | ₹ 74,447.50 |
| 750 | ₹ 294.06 | ₹ 2,20,545.00 |
| 1250 | ₹ 290.32 | ₹ 3,62,900.00 |
Stock: 800
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 800 | ₹ 701.32 | ₹ 5,61,056.00 |
| 50 | ₹ 759.17 | ₹ 37,958.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 90A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 9.3mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 3V @ 250µA | |
| Max Gate Charge at Vgs | 240 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 9200 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2.4W (Ta), 250W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220AB | |
| Component Housing Style | TO-220-3 |
Description
Supports a continuous drain current (Id) of 90A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 240 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 240 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 9200 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 9200 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Enclosure type TO-220AB ensuring device integrity. Highest power dissipation 2.4W (Ta), 250W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 240 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 9.3mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type TO-220AB for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.
