IKP10N60T

IKP10N60T

Data Sheet

Attribute
Description
Manufacturer Part Number
IKP10N60T
Description
Transistor: IGBT; 600V; 10A; 110W; TO220
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Stock:
55

Distributor: 150

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 102.35 ₹ 102.35
100 ₹ 85.44 ₹ 8,544.00
500 ₹ 74.76 ₹ 37,380.00
1000 ₹ 72.98 ₹ 72,980.00

Product Attributes

Type Description
Category
IGBT Class NPT, Trench and Field Stop
Max Collector-Emitter Breakdown 600V
Maximum Collector Amps 20A
Maximum Power Handling 110W
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 10A
Entry Signal Category Standard
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Provides a maximum collector current (Ic) of 20A. Features a DC current gain hFE at Ic evaluated at 2.05V @ 15V, 10A. Designed as NPT, Trench and Field Stop IGBT type for effective power switching. Set up with Standard input type for versatile applications. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 110W for device protection. Peak Vce(on) at Vge 2.05V @ 15V, 10A for transistor parameters. Highest collector-emitter breakdown voltage 600V.

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