Attribute
Description
Manufacturer Part Number
MG200J6ES61
Manufacturer
Description
IGBTs - Arrays,
Modules,
600V,
200A,
1000W
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | - | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 200A | |
| Maximum Power Handling | 1000W | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 200A | |
| Entry Signal Category | 40nF @ 10V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module |
Description
Provides a maximum collector current (Ic) of 200A. Features a DC current gain hFE at Ic evaluated at 2.4V @ 15V, 200A. Set up with 40nF @ 10V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case Module providing mechanical and thermal shielding. Peak power 1000W for device protection. Peak Vce(on) at Vge 2.4V @ 15V, 200A for transistor parameters. Highest collector-emitter breakdown voltage 600V.