JANTX2N4091
Data Sheet
Attribute
Description
Manufacturer Part Number
JANTX2N4091
Manufacturer
Description
Junction Field Effect Transistors,
40V,
360mW
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 40V | |
| Drain-Source Breakdown Volts | 40V | |
| Drain Current at Vds | 30mA @ 20V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | - | |
| Maximum Power Handling | 360mW | |
| Input Cap at Vds | 16pF @ 20V | |
| RDS On Resistance | 30 Ohm | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AA, TO-18-3 Metal Can |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 30mA @ 20V. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 16pF @ 20V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Resistance in the on-state 30 Ohm for efficient conduction. Enclosure/case TO-206AA, TO-18-3 Metal Can providing mechanical and thermal shielding. Peak power 360mW for device protection. RDS(on) resistance value 30 Ohm for MOSFET operation. V(BR)GSS breakdown level 40V for semiconductors.
