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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Off-State Voltage Rating | 600 V | |
| Max Gate Trigger Volts | 800 mV | |
| Max Gate Trigger Amps | 25 µA | |
| Max On-State Voltage Drop | 1.95 V | |
| Max Average On-State Current | 500 mA | |
| Max RMS On-State Current | 800 mA | |
| Maximum Holding Current | 5 mA | |
| Maximum Off-State Current | 10 µA | |
| Non-Repetitive Surge 50/60Hz | 7A, 8A | |
| Silicon Controlled Rectifier Style | Sensitive Gate | |
| Ambient Temp Range | -40°C ~ 125°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Vendor Package Type | TO-92-3 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provides a maximum gate trigger current (Igt) rated at 25 µA. Presents maximum hold current recorded at 5 mA. Can handle surge current Itsm rated at 7A, 8A for 50/60Hz. Has a maximum off-state current of 10 µA. Offers maximum average on-state current It(AV) of 500 mA. Accommodates RMS on-state current rated at 800 mA. Mounting style Through Hole for structural integrity. Operating temperature -40°C ~ 125°C for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) Formed Leads providing mechanical and thermal shielding. Enclosure type TO-92-3 ensuring device integrity. Product condition Obsolete for availability and lifecycle. SCR model Sensitive Gate for thyristor details. Manufacturer package type TO-92-3 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Highest gate trigger voltage 800 mV for SCRs. Voltage 600 V in off-state for semiconductors or switches. Maximum voltage drop Vtm 1.95 V in on-state for semiconductors.