Attribute
Description
Manufacturer Part Number
MMBT5401-G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
600mA,...
Manufacturer Lead Time
15 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 600mA | |
| Max Collector-Emitter Breakdown | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V | |
| Maximum Power Handling | 300mW | |
| Transition Freq | 100MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Provides a maximum collector current (Ic) of 600mA. Features a DC current gain hFE at Ic evaluated at 500mV @ 5mA, 50mA. Offers 100MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 300mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 5mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 150V.
