MMST5401-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
MMST5401-TP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
200mA,...
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 200mA | |
| Max Collector-Emitter Breakdown | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA | |
| Collector Cutoff Max | 50nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V | |
| Maximum Power Handling | 200mW | |
| Transition Freq | 300MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current 50nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 200mA. Offers a collector cutoff current rated at 50nA. Features a DC current gain hFE at Ic evaluated at 500mV @ 5mA, 50mA. Offers 300MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 500mV @ 5mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 150V.
