JAN2N3811L
Data Sheet
Attribute
Description
Manufacturer Part Number
JAN2N3811L
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 PNP (Dual) | |
| Maximum Collector Amps | 50mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V | |
| Maximum Power Handling | 350mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-78-6 Metal Can |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 50mA. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 250mV @ 100µA, 1mA. Mounting style Through Hole for structural integrity. Enclosure/case TO-78-6 Metal Can providing mechanical and thermal shielding. Peak power 350mW for device protection. Type of transistor 2 PNP (Dual) for circuit architecture. Peak Vce(on) at Vge 250mV @ 100µA, 1mA for transistor parameters. Highest collector-emitter breakdown voltage 60V.