JANTX2N4854

JANTX2N4854

Data Sheet

Attribute
Description
Manufacturer Part Number
JANTX2N4854
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, PNP,...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN, PNP
Maximum Collector Amps 600mA
Max Collector-Emitter Breakdown 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Maximum Power Handling 600mW
Transition Freq -
Attachment Mounting Style -
Component Housing Style -

Description

Provides a maximum collector current (Ic) of 600mA. Features a DC current gain hFE at Ic evaluated at 400mV @ 15mA, 150mA. Peak power 600mW for device protection. Type of transistor NPN, PNP for circuit architecture. Peak Vce(on) at Vge 400mV @ 15mA, 150mA for transistor parameters. Highest collector-emitter breakdown voltage 40V.

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