JANTXV2N2484UB
Data Sheet
Attribute
Description
Manufacturer Part Number
JANTXV2N2484UB
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
50mA,
60V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 50mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA | |
| Collector Cutoff Max | 2nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100µA, 5V | |
| Maximum Power Handling | 360mW | |
| Transition Freq | - | |
| Attachment Mounting Style | - | |
| Component Housing Style | 3-SMD, No Lead |
Description
Measures resistance at forward current 2nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 50mA. Offers a collector cutoff current rated at 2nA. Features a DC current gain hFE at Ic evaluated at 300mV @ 100µA, 1mA. Enclosure/case 3-SMD, No Lead providing mechanical and thermal shielding. Peak power 360mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 300mV @ 100µA, 1mA for transistor parameters. Highest collector-emitter breakdown voltage 60V.