JANTXV2N2605
Data Sheet
Attribute
Description
Manufacturer Part Number
JANTXV2N2605
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
30mA,
60V
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 30mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
| Collector Cutoff Max | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V | |
| Maximum Power Handling | 400mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AB, TO-46-3 Metal Can |
Description
Measures resistance at forward current 100nA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 30mA. Offers a collector cutoff current rated at 100nA (ICBO). Features a DC current gain hFE at Ic evaluated at 300mV @ 500µA, 10mA. Mounting style Through Hole for structural integrity. Enclosure/case TO-206AB, TO-46-3 Metal Can providing mechanical and thermal shielding. Peak power 400mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 300mV @ 500µA, 10mA for transistor parameters. Highest collector-emitter breakdown voltage 60V.
