Attribute
Description
Manufacturer Part Number
DTC114EET1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1000
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 2.43 | ₹ 2,430.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Pre-Biased | |
| Maximum Collector Amps | 100mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
| Collector Cutoff Max | 500nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | |
| Maximum Power Handling | 200mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-75, SOT-416 |
Description
Measures resistance at forward current 500nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 100mA. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 250mV @ 300µA, 10mA. Mounting style Surface Mount for structural integrity. Enclosure/case SC-75, SOT-416 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN - Pre-Biased for circuit architecture. Peak Vce(on) at Vge 250mV @ 300µA, 10mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
