Attribute
Description
Manufacturer Part Number
2N2222AUATX
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
800mA,...
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 800mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 15mA, 150mA | |
| Collector Cutoff Max | 10nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1mA, 10V | |
| Maximum Power Handling | 500mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 4-CLCC |
Description
Measures resistance at forward current 10nA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 800mA. Offers a collector cutoff current rated at 10nA (ICBO). Features a DC current gain hFE at Ic evaluated at 300mV @ 15mA, 150mA. Mounting style Surface Mount for structural integrity. Enclosure/case 4-CLCC providing mechanical and thermal shielding. Peak power 500mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 300mV @ 15mA, 150mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
