Attribute
Description
Manufacturer Part Number
2N2907AUB
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
600mA,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 600mA | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Collector Cutoff Max | 50nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 10V | |
| Maximum Power Handling | 300mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-LCC |
Description
Measures resistance at forward current 50nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 600mA. Offers a collector cutoff current rated at 50nA. Features a DC current gain hFE at Ic evaluated at 1.6V @ 50mA, 500mA. Mounting style Surface Mount for structural integrity. Enclosure/case 3-LCC providing mechanical and thermal shielding. Peak power 300mW for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 1.6V @ 50mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 60V.
