2SB1570
Data Sheet
Attribute
Description
Manufacturer Part Number
2SB1570
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 12A | |
| Max Collector-Emitter Breakdown | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 7mA, 7A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 7A, 4V | |
| Maximum Power Handling | 150W | |
| Transition Freq | 50MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 3-ESIP |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 12A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 2.5V @ 7mA, 7A. Offers 50MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case 3-ESIP providing mechanical and thermal shielding. Peak power 150W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 2.5V @ 7mA, 7A for transistor parameters. Highest collector-emitter breakdown voltage 150V.
