RN2310(TE85L,F)
Data Sheet
Attribute
Description
Manufacturer Part Number
RN2310(TE85L,F)
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Pre-Biased | |
| Maximum Collector Amps | 100mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Collector Cutoff Max | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Maximum Power Handling | 100mW | |
| Transition Freq | 200MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current 100nA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 100mA. Offers a collector cutoff current rated at 100nA (ICBO). Features a DC current gain hFE at Ic evaluated at 300mV @ 250µA, 5mA. Offers 200MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 100mW for device protection. Type of transistor PNP - Pre-Biased for circuit architecture. Peak Vce(on) at Vge 300mV @ 250µA, 5mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
