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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Signal Booster Category | J-FET | |
| Electrical Circuit Count | 1 | |
| Exit Signal Category | - | |
| Voltage Slew Speed V/us | 3.5 V/?s | |
| Amplifier Bandwidth Gain | 1MHz | |
| 3dB Bandwidth | - | |
| Bias Input Amperage | 30pA | |
| Input Offset Voltage | 3mV | |
| Power Supply Amperage | 200?A | |
| Per-Channel Output Current | 20mA | |
| Single or Dual Supply Option | 6 V ~ 36 V, ?3 V ~ 18 V | |
| Ambient Temp Range | -40?C ~ 105?C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 8-DIP (0.300", 7.62mm) |
Description
Incorporates a J-FET amplifier design for improved signal transmission. Measures resistance at forward current 1MHz for LED or diode evaluation. Includes input bias current rated at 30pA. Presents per-channel output current rated at 20mA. Utilizes supply current defined as 200?A. Tuned with 1MHz gain bandwidth product for effective high-frequency performance. Mounting style Through Hole for structural integrity. Total circuits 1 for electrical or electronic designs. Operating temperature -40?C ~ 105?C for thermal stability. Enclosure/case 8-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Transition rate 3.5 V/?s for signal change speed. Peak Vce(on) at Vge 1 for transistor parameters. Input offset voltage 3mV for analog systems. Single/dual voltage supply ± 6 V ~ 36 V, ?3 V ~ 18 V for various devices.
