CMS120N007WH

CMS120N007WH
Attribute
Description
Manufacturer Part Number
CMS120N007WH
Manufacturer
Description
SIC N-MOSFET, 1200V, 160A, TO-247HC
Note : GST will not be applied to orders shipping outside of India

Stock:
100

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
100 ₹ 1,445.60 ₹ 1,44,560.00
10 ₹ 1,724.84 ₹ 17,248.40
1 ₹ 2,368.11 ₹ 2,368.11

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform SiCFET (Silicon Carbide)
Drain-Source Breakdown Volts 1200 V
Continuous Drain Current at 25C 160A (Tc)
Gate Drive Voltage Range 18V, 20V
Max On-State Resistance 9mOhm @ 80A, 20V
Max Threshold Gate Voltage 3.5V @ 10mA
Max Gate Charge at Vgs -
Maximum Gate Voltage -10V, +20V
Max Input Cap at Vds -
Transistor Special Function -
Max Heat Dissipation 750W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Vendor Package Type TO-247HC-4L
Component Housing Style TO-247-4L

Description

Supports a continuous drain current (Id) of 160A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 1200 V. Accommodates drive voltage specified at 18V, 20V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure/case TO-247-4L providing mechanical and thermal shielding. Enclosure type TO-247HC-4L ensuring device integrity. Highest power dissipation 750W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 9mOhm @ 80A, 20V for MOSFET criteria. Manufacturer package type TO-247HC-4L for component choice. Platform technology SiCFET (Silicon Carbide) for the type of product. Peak Vgs -10V, +20V for MOSFET parameters. Peak Vgs(th) at Id 3.5V @ 10mA for MOSFET threshold level.

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