Stock: 3413
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3500 | ₹ 282.57 | ₹ 9,88,995.00 |
| 100 | ₹ 345.87 | ₹ 34,587.00 |
| 10 | ₹ 455.50 | ₹ 4,555.00 |
| 1 | ₹ 671.95 | ₹ 671.95 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | ICeGaN™ | |
| IC Encapsulation Type | Cut Tape (CT) | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 12A | |
| Gate Drive Voltage Range | 12V | |
| Max On-State Resistance | 182mOhm @ 900mA, 12V | |
| Max Threshold Gate Voltage | 4.2V @ 4.2mA | |
| Max Gate Charge at Vgs | 1.9 nC @ 12 V | |
| Maximum Gate Voltage | +20V, -1V | |
| Max Input Cap at Vds | - | |
| Transistor Special Function | - | |
| Max Heat Dissipation | - | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 16-DFN (8x8) | |
| Component Housing Style | 16-PowerVDFN |
Description
Supports a continuous drain current (Id) of 12A at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 12V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 1.9 nC @ 12 V gate charge at Vgs for enhanced switching efficiency. Upholds 1.9 nC @ 12 V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Cut Tape (CT) for component protection or transport. Enclosure/case 16-PowerVDFN providing mechanical and thermal shielding. Enclosure type 16-DFN (8x8) ensuring device integrity. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 1.9 nC @ 12 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 182mOhm @ 900mA, 12V for MOSFET criteria. Product or component classification series ICeGaN™. Manufacturer package type 16-DFN (8x8) for component choice. Platform technology GaNFET (Gallium Nitride) for the type of product. Peak Vgs +20V, -1V for MOSFET parameters. Peak Vgs(th) at Id 4.2V @ 4.2mA for MOSFET threshold level.
