FF06060E-3A

FF06060E-3A
Attribute
Description
Manufacturer Part Number
FF06060E-3A
Manufacturer
Description
SICFET N-CH 650V 43A TO-247-3L
Note : GST will not be applied to orders shipping outside of India

Stock:
300

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
600 ₹ 362.80 ₹ 2,17,680.00
100 ₹ 371.87 ₹ 37,187.00
10 ₹ 399.08 ₹ 3,990.80
1 ₹ 1,088.47 ₹ 1,088.47

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line Falcon
IC Encapsulation Type Tube
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform SiCFET (Silicon Carbide)
Drain-Source Breakdown Volts 650 V
Continuous Drain Current at 25C 43A (Tc)
Gate Drive Voltage Range 18V
Max On-State Resistance 80mOhm @ 15A, 18V
Max Threshold Gate Voltage 2.5V @ 20mA
Max Gate Charge at Vgs 69 nC @ 15 V
Maximum Gate Voltage +18V, -8V
Max Input Cap at Vds 1499 pF @ 400 V
Transistor Special Function -
Max Heat Dissipation 202W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level Automotive
Certification Qualification AEC-Q101
Attachment Mounting Style -
Vendor Package Type TO-247-3L
Component Housing Style TO-247-3

Description

Supports a continuous drain current (Id) of 43A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 18V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 69 nC @ 15 V gate charge at Vgs for enhanced switching efficiency. Upholds 69 nC @ 15 V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 1499 pF @ 400 V at Vds for safeguarding the device. The input capacitance is rated at 1499 pF @ 400 V at Vds for optimal performance. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3L ensuring device integrity. Highest power dissipation 202W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 69 nC @ 15 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 80mOhm @ 15A, 18V for MOSFET criteria. Product or component classification series Falcon. Manufacturer package type TO-247-3L for component choice. Platform technology SiCFET (Silicon Carbide) for the type of product. Peak Vgs +18V, -8V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 20mA for MOSFET threshold level.

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