Stock: 295
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 600 | ₹ 388.02 | ₹ 2,32,812.00 |
| 100 | ₹ 397.72 | ₹ 39,772.00 |
| 10 | ₹ 426.84 | ₹ 4,268.40 |
| 1 | ₹ 1,164.12 | ₹ 1,164.12 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | Falcon | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | SiCFET (Silicon Carbide) | |
| Drain-Source Breakdown Volts | 1200 V | |
| Continuous Drain Current at 25C | 29A (Tc) | |
| Gate Drive Voltage Range | 18V | |
| Max On-State Resistance | 112mOhm @ 8A, 18V | |
| Max Threshold Gate Voltage | 2.5V @ 20mA | |
| Max Gate Charge at Vgs | 73 nC @ 15 V | |
| Maximum Gate Voltage | +18V, -8V | |
| Max Input Cap at Vds | 1548 pF @ 800 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 180W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | - | |
| Vendor Package Type | TO-247-4L | |
| Component Housing Style | TO-247-4 |
Description
Supports a continuous drain current (Id) of 29A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 1200 V. Accommodates drive voltage specified at 18V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 73 nC @ 15 V gate charge at Vgs for enhanced switching efficiency. Upholds 73 nC @ 15 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1548 pF @ 800 V at Vds for safeguarding the device. The input capacitance is rated at 1548 pF @ 800 V at Vds for optimal performance. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-4 providing mechanical and thermal shielding. Enclosure type TO-247-4L ensuring device integrity. Highest power dissipation 180W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 73 nC @ 15 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 112mOhm @ 8A, 18V for MOSFET criteria. Product or component classification series Falcon. Manufacturer package type TO-247-4L for component choice. Platform technology SiCFET (Silicon Carbide) for the type of product. Peak Vgs +18V, -8V for MOSFET parameters. Peak Vgs(th) at Id 2.5V @ 20mA for MOSFET threshold level.
