Stock: 3000
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 15000 | ₹ 20.61 | ₹ 3,09,150.00 |
| 9000 | ₹ 20.80 | ₹ 1,87,200.00 |
| 6000 | ₹ 21.12 | ₹ 1,26,720.00 |
| 3000 | ₹ 21.38 | ₹ 64,140.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | XP10C150 | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 2.5A (Ta) | |
| Max On-State Resistance | 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V | |
| Max Threshold Gate Voltage | 3V @ 250µA | |
| Max Gate Charge at Vgs | 17.6nC @ 10V, 51.2nC @ 10V | |
| Max Input Cap at Vds | 960pF @ 50V, 3040pF @ 50V | |
| Maximum Power Handling | 2W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SO |
Description
Provided in a setup characterized as N and P-Channel. Supports a continuous drain current (Id) of 2.5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Guarantees maximum 17.6nC @ 10V, 51.2nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 17.6nC @ 10V, 51.2nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 960pF @ 50V, 3040pF @ 50V at Vds for safeguarding the device. The input capacitance is rated at 960pF @ 50V, 3040pF @ 50V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SO ensuring device integrity. Peak power 2W (Ta) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 17.6nC @ 10V, 51.2nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V for MOSFET criteria. Product or component classification series XP10C150. Manufacturer package type 8-SO for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.
