Stock: 3000
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2000 | ₹ 104.32 | ₹ 2,08,640.00 |
| 1000 | ₹ 105.77 | ₹ 1,05,770.00 |
| 500 | ₹ 109.27 | ₹ 54,635.00 |
| 100 | ₹ 112.20 | ₹ 11,220.00 |
| 50 | ₹ 114.11 | ₹ 5,705.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | XP10N3R8 | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 100 V | |
| Continuous Drain Current at 25C | 67.7A (Ta) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 3.88mOhm @ 35A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 131 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 6560 pF @ 80 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 1.92W (Ta), 32.8W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220CFM | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 67.7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 131 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 131 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 6560 pF @ 80 V at Vds for safeguarding the device. The input capacitance is rated at 6560 pF @ 80 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220CFM ensuring device integrity. Highest power dissipation 1.92W (Ta), 32.8W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 131 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.88mOhm @ 35A, 10V for MOSFET criteria. Product or component classification series XP10N3R8. Manufacturer package type TO-220CFM for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
