Stock: 3000
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 55.32 | ₹ 1,65,960.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | XS10NA011 | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 100 V | |
| Continuous Drain Current at 25C | 48.5A (Tc) | |
| Gate Drive Voltage Range | 6V, 10V | |
| Max On-State Resistance | 11mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 56 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 2288 pF @ 80 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2W (Ta), 50W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | TO-252 | |
| Component Housing Style | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Description
Supports a continuous drain current (Id) of 48.5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100 V. Accommodates drive voltage specified at 6V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 56 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 56 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2288 pF @ 80 V at Vds for safeguarding the device. The input capacitance is rated at 2288 pF @ 80 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type TO-252 ensuring device integrity. Highest power dissipation 2W (Ta), 50W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 56 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 11mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series XS10NA011. Manufacturer package type TO-252 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
