Stock: 3000
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 86.29 | ₹ 2,58,870.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | XP6NA1R4C | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 44.6A (Ta), 100A (Tc) | |
| Gate Drive Voltage Range | 6V, 10V | |
| Max On-State Resistance | 1.45mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 195 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 11520 pF @ 50 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 5W (Ta), 113.6W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | PMPAK® 5 x 6 | |
| Component Housing Style | 8-PowerLDFN |
Description
Supports a continuous drain current (Id) of 44.6A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 6V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 195 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 195 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 11520 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 11520 pF @ 50 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerLDFN providing mechanical and thermal shielding. Enclosure type PMPAK® 5 x 6 ensuring device integrity. Highest power dissipation 5W (Ta), 113.6W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 195 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.45mOhm @ 20A, 10V for MOSFET criteria. Product or component classification series XP6NA1R4C. Manufacturer package type PMPAK® 5 x 6 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
