Stock: 2000
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2000 | ₹ 177.02 | ₹ 3,54,040.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | XP8NA1R2 | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 80 V | |
| Continuous Drain Current at 25C | 300A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 1.2mOhm @ 100A, 10V | |
| Max Threshold Gate Voltage | 5V @ 250µA | |
| Max Gate Charge at Vgs | 424 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 25120 pF @ 60 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 3.75W (Ta), 333W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | TOLL | |
| Component Housing Style | 8-PowerSFN |
Description
Supports a continuous drain current (Id) of 300A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 80 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 424 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 424 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 25120 pF @ 60 V at Vds for safeguarding the device. The input capacitance is rated at 25120 pF @ 60 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerSFN providing mechanical and thermal shielding. Enclosure type TOLL ensuring device integrity. Highest power dissipation 3.75W (Ta), 333W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 424 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.2mOhm @ 100A, 10V for MOSFET criteria. Product or component classification series XP8NA1R2. Manufacturer package type TOLL for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.
