IRG4IBC10UDPBF
Data Sheet
Attribute
Description
Manufacturer Part Number
IRG4IBC10UDPBF
Manufacturer
Description
Transistor: IGBT; 1.2kV; 11A; 60W; TO220ISO
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | - | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 6.8A | |
| Maximum Power Handling | 25W | |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 5A | |
| Entry Signal Category | Standard | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Provides a maximum collector current (Ic) of 6.8A. Features a DC current gain hFE at Ic evaluated at 2.6V @ 15V, 5A. Set up with Standard input type for versatile applications. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 25W for device protection. Peak Vce(on) at Vge 2.6V @ 15V, 5A for transistor parameters. Highest collector-emitter breakdown voltage 600V.
