IRGB4B60KD1PBF
Data Sheet
Attribute
Description
Manufacturer Part Number
IRGB4B60KD1PBF
Manufacturer
Description
Transistor: IGBT; 600V; 12A; 63W; TO220AB
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 11A | |
| Maximum Power Handling | 63W | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A | |
| Entry Signal Category | Standard | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Provides a maximum collector current (Ic) of 11A. Features a DC current gain hFE at Ic evaluated at 2.5V @ 15V, 4A. Designed as NPT IGBT type for effective power switching. Set up with Standard input type for versatile applications. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 63W for device protection. Peak Vce(on) at Vge 2.5V @ 15V, 4A for transistor parameters. Highest collector-emitter breakdown voltage 600V.
