FII50-12E
Data Sheet
Attribute
Description
Manufacturer Part Number
FII50-12E
Manufacturer
Description
IGBTs - Arrays,
Modules,
1200V,
50A,
200W
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 50A | |
| Maximum Power Handling | 200W | |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A | |
| Entry Signal Category | 2nF @ 25V | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | - |
Description
Provides a maximum collector current (Ic) of 50A. Features a DC current gain hFE at Ic evaluated at 2.6V @ 15V, 30A. Designed as NPT IGBT type for effective power switching. Set up with 2nF @ 25V input type for versatile applications. Mounting style Through Hole for structural integrity. Peak power 200W for device protection. Peak Vce(on) at Vge 2.6V @ 15V, 30A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.
