APTGT50H60RT3G
Data Sheet
Attribute
Description
Manufacturer Part Number
APTGT50H60RT3G
Manufacturer
Description
POWER MOD IGBT3 FULL BRIDGE SP3
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | Trench and Field Stop | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 80A | |
| Maximum Power Handling | 176W | |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A | |
| Entry Signal Category | 3.15nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SP3 |
Description
Provides a maximum collector current (Ic) of 80A. Features a DC current gain hFE at Ic evaluated at 1.9V @ 15V, 50A. Designed as Trench and Field Stop IGBT type for effective power switching. Set up with 3.15nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case SP3 providing mechanical and thermal shielding. Peak power 176W for device protection. Peak Vce(on) at Vge 1.9V @ 15V, 50A for transistor parameters. Highest collector-emitter breakdown voltage 600V.
