Attribute
Description
Manufacturer Part Number
MG800J2YS50A
Manufacturer
Description
IGBTs - Arrays,
Modules,
600V,
800A,
2900W
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | - | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 800A | |
| Maximum Power Handling | 2900W | |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 800A | |
| Entry Signal Category | 93nF @ 10V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module |
Description
Provides a maximum collector current (Ic) of 800A. Features a DC current gain hFE at Ic evaluated at 3V @ 15V, 800A. Set up with 93nF @ 10V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case Module providing mechanical and thermal shielding. Peak power 2900W for device protection. Peak Vce(on) at Vge 3V @ 15V, 800A for transistor parameters. Highest collector-emitter breakdown voltage 600V.