AS4C64M8D1-5TCN

AS4C64M8D1-5TCN
Attribute
Description
Manufacturer Part Number
AS4C64M8D1-5TCN
Description
IC DRAM 512MBIT PAR 66TSOP II
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Stock:
16

Distributor: 120

Lead Time: Not specified

Quantity Unit Price Ext. Price
15 ₹ 259.17 ₹ 3,887.55
6 ₹ 336.92 ₹ 2,021.52
1 ₹ 518.34 ₹ 518.34

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tray
Availability Status Active
RAM Technology Category Volatile
Storage Media Type DRAM
Core Technology Platform SDRAM - DDR
Total Memory Bytes 512Mbit
Storage Layout Structure 64M x 8
Data Access Bus Parallel
Timing Pulse Rate 200 MHz
Memory Write Speed Word/Page 15ns
Data Retrieval Speed 700 ps
Power Supply Voltage 2.3V ~ 2.7V
Ambient Temp Range 0°C ~ 70°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 66-TSSOP (0.400", 10.16mm Width)
Vendor Package Type 66-TSOP II

Description

Reaches access speeds recorded at 700 ps for efficient data retrieval. Functions at a clock frequency of 200 MHz. Storage format DRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 64M x 8 for optimal data retrieval. Memory total 512Mbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature 0°C ~ 70°C (TA) for thermal stability. Enclosure Tray for component protection or transport. Enclosure/case 66-TSSOP (0.400", 10.16mm Width) providing mechanical and thermal shielding. Enclosure type 66-TSOP II ensuring device integrity. Product condition Active for availability and lifecycle. Manufacturer package type 66-TSOP II for component choice. Voltage supply 2.3V ~ 2.7V for electrical needs. Platform technology SDRAM - DDR for the type of product. Operating supply voltage 2.3V ~ 2.7V for the device. Time taken to write per word or page 15ns for memory units.

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