AS4C2M32S-7TCN

AS4C2M32S-7TCN
Attribute
Description
Manufacturer Part Number
AS4C2M32S-7TCN
Manufacturer
Description
IC DRAM 64MBIT PAR 86TSOP II
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tray
Availability Status Obsolete
RAM Technology Category Volatile
Storage Media Type DRAM
Core Technology Platform SDRAM
Total Memory Bytes 64Mbit
Storage Layout Structure 2M x 32
Data Access Bus Parallel
Timing Pulse Rate 143 MHz
Memory Write Speed Word/Page 2ns
Data Retrieval Speed 5.5 ns
Power Supply Voltage 3V ~ 3.6V
Ambient Temp Range 0°C ~ 70°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 86-TFSOP (0.400", 10.16mm Width)
Vendor Package Type 86-TSOP II

Description

Reaches access speeds recorded at 5.5 ns for efficient data retrieval. Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Functions at a clock frequency of 143 MHz. Storage format DRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 2M x 32 for optimal data retrieval. Memory total 64Mbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature 0°C ~ 70°C (TA) for thermal stability. Enclosure Tray for component protection or transport. Enclosure/case 86-TFSOP (0.400", 10.16mm Width) providing mechanical and thermal shielding. Enclosure type 86-TSOP II ensuring device integrity. Product condition Obsolete for availability and lifecycle. Manufacturer package type 86-TSOP II for component choice. Voltage supply 3V ~ 3.6V for electrical needs. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology SDRAM for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Operating supply voltage 3V ~ 3.6V for the device. Time taken to write per word or page 2ns for memory units.

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