AS6C4008-55ZIN

Description

Reaches access speeds recorded at 55 ns for efficient data retrieval. Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Storage format SRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 512K x 8 for optimal data retrieval. Memory total 4Mbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tray for component protection or transport. Enclosure/case 32-SOIC (0.400", 10.16mm Width) providing mechanical and thermal shielding. Enclosure type 32-TSOP II ensuring device integrity. Product condition Active for availability and lifecycle. Manufacturer package type 32-TSOP II for component choice. Voltage supply 2.7V ~ 5.5V for electrical needs. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology SRAM - Asynchronous for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Operating supply voltage 2.7V ~ 5.5V for the device. Time taken to write per word or page 55ns for memory units.