Stock: 4
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 20,559.00 | ₹ 2,05,59,000.00 |
| 500 | ₹ 21,260.32 | ₹ 1,06,30,160.00 |
| 100 | ₹ 21,960.75 | ₹ 21,96,075.00 |
| 25 | ₹ 22,662.07 | ₹ 5,66,551.75 |
| 1 | ₹ 23,362.50 | ₹ 23,362.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| RAM Technology Category | Non-Volatile | |
| Storage Media Type | EEPROM | |
| Core Technology Platform | EEPROM | |
| Total Memory Bytes | 1Mbit | |
| Storage Layout Structure | 128K x 8 | |
| Data Access Bus | Parallel | |
| Timing Pulse Rate | - | |
| Memory Write Speed Word/Page | 10ms | |
| Data Retrieval Speed | 150 ns | |
| Power Supply Voltage | 4.5V ~ 5.5V | |
| Ambient Temp Range | -55°C ~ 125°C (TC) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 44-CLCC | |
| Vendor Package Type | 44-CLCC (16.55x16.55) |
Description
Reaches access speeds recorded at 150 ns for efficient data retrieval. Storage format EEPROM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 128K x 8 for optimal data retrieval. Memory total 1Mbit for device storage capability. Memory classification Non-Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 125°C (TC) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 44-CLCC providing mechanical and thermal shielding. Enclosure type 44-CLCC (16.55x16.55) ensuring device integrity. Product condition Obsolete for availability and lifecycle. Manufacturer package type 44-CLCC (16.55x16.55) for component choice. Voltage supply 4.5V ~ 5.5V for electrical needs. Platform technology EEPROM for the type of product. Operating supply voltage 4.5V ~ 5.5V for the device. Time taken to write per word or page 10ms for memory units.
