AT34C02CY6-YHAT-T

AT34C02CY6-YHAT-T
Attribute
Description
Manufacturer Part Number
AT34C02CY6-YHAT-T
Manufacturer
Description
IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Note : GST will not be applied to orders shipping outside of India

Stock:
1000

Distributor: 111

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 40.09 ₹ 40,09,000.00
10000 ₹ 47.86 ₹ 4,78,600.00
1000 ₹ 53.68 ₹ 53,680.00
574 ₹ 58.21 ₹ 33,412.54

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
RAM Technology Category Non-Volatile
Storage Media Type EEPROM
Core Technology Platform EEPROM
Total Memory Bytes 2Kbit
Storage Layout Structure 256 x 8
Data Access Bus I2C
Timing Pulse Rate 400 kHz
Memory Write Speed Word/Page 5ms
Data Retrieval Speed 900 ns
Power Supply Voltage 2.5V ~ 5.5V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-UFDFN Exposed Pad
Vendor Package Type 8-UDFN (2x3)

Description

Reaches access speeds recorded at 900 ns for efficient data retrieval. Functions at a clock frequency of 400 kHz. Storage format EEPROM for data interoperability. Memory bus I2C for connectivity and performance. Memory arrangement 256 x 8 for optimal data retrieval. Memory total 2Kbit for device storage capability. Memory classification Non-Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case 8-UFDFN Exposed Pad providing mechanical and thermal shielding. Enclosure type 8-UDFN (2x3) ensuring device integrity. Product condition Active for availability and lifecycle. Manufacturer package type 8-UDFN (2x3) for component choice. Voltage supply 2.5V ~ 5.5V for electrical needs. Platform technology EEPROM for the type of product. Operating supply voltage 2.5V ~ 5.5V for the device. Time taken to write per word or page 5ms for memory units.

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